Pattern generation for direct-write three-dimensional nanoscale structures via focused electron beam induced deposition

• Lukas Keller and
• Michael Huth

Beilstein J. Nanotechnol. 2018, 9, 2581–2598, doi:10.3762/bjnano.9.240

• ° towards the substrate, sF becomes the vertical growth rate zF for the given experimental parameters (precursor type, beam parameters, gas flux and direction, substrate material, etc.). zF can be easily calibrated by writing a pillar with the height hdef specified in the geof, such as hdef = 300 nm, and an

Towards the third dimension in direct electron beam writing of silver

• Katja Höflich,
• Jakub Mateusz Jurczyk,
• Katarzyna Madajska,
• Maximilian Götz,
• Luisa Berger,
• Carlos Guerra-Nuñez,
• Caspar Haverkamp,
• Iwona Szymanska and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 842–849, doi:10.3762/bjnano.9.78

• towards the direct electron beam writing of three-dimensional plasmonic device parts from the gas phase. Keywords: carboxylate; electron beam induced deposition; silver; three-dimensional nanostructures; vertical growth rate; Introduction Focused electron beam induced deposition (FEBID) is a resistless

• electrons are expected to contribute to the precursor dissociation [4]. The ultimate resolution of the fabricated features strongly depends on the number and energy of primary electrons [6][7]. In this respect, the vertical growth rate plays a crucial role. The vertical growth rate is determined by the

• precursor dynamics, especially by adsorption and by diffusion of the molecules, and by the actual precursor flux. Upon vertical growth, the size of the interaction volume where secondary electrons are generated, significantly decreases since it moves upwards into the deposit [8]. If the vertical growth rate

Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

• Ragesh Kumar T P,
• Sangeetha Hari,
• Krishna K Damodaran,
• Oddur Ingólfsson and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2017, 8, 2376–2388, doi:10.3762/bjnano.8.237

• those of the SCH pillars over the entire range of deposition times. Figure 5b shows how the pillar height develops for increasing deposition time for both precursor molecules. Both curves show a linearly increasing height for small exposure times and a slightly decreasing vertical growth rate at higher

• [4][40]. In the nucleation stage a dot-like deposit will form, predominantly due to the scattered electrons emitted from the substrate surface. In the fast-growth stage, a cone shaped pillar grows with maximum lateral and vertical growth rate. During the fast growth stage, the growth is enhanced by

3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

• Brett B. Lewis,
• Robert Winkler,
• Xiahan Sang,
• Pushpa R. Pudasaini,
• Michael G. Stanford,
• Harald Plank,
• Raymond R. Unocic,
• Jason D. Fowlkes and
• Philip D. Rack

Beilstein J. Nanotechnol. 2017, 8, 801–812, doi:10.3762/bjnano.8.83

• ) clearly impacts the final deposit growth and morphology (Figure 2, case #3). In this case, the segment angle decreases reflecting a decrease in the vertical growth rate per pixel dwell. The reduced growth rate is a result of two contributing factors, namely: 1) densification and carbon reduction [54] and

Continuum models of focused electron beam induced processing

• Milos Toth,
• Charlene Lobo,
• Vinzenz Friedli,
• Aleksandra Szkudlarek and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1518–1540, doi:10.3762/bjnano.6.157

• concentration can be found by solving Equation 12 in the limit t→∞: Substituting into Equation 13 gives the steady state growth rate . The vertical growth rate ∂h/∂t, which is easily measured experimentally, is proportional to : where h is the deposit height (or etch pit depth), ι is ±1 for deposition and

• concentration (corresponding to one monolayer) in the absence of electron irradiation (i.e., n0 = 1/Aa). The steady-state concentration of adsorbates under an electron beam, given by Equation 14, and the steady-state vertical growth rate defined by Equation 15 can now be reformulated as: In the above, is a

• the irradiative depletion parameter . The resulting time-evolution of Na is given by the solution to Equation 12, which can be expressed as: The corresponding vertical growth rate is proportional to Na(t) and the electron flux, and is given by: The lateral size of the growing structure or etch pit